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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,378
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 4.1A 8-SOIC | LITTLE FOOT® | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.7W (Ta), 2.8W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 4.1A (Tc) | 108 mOhm @ 3.3A, 4.5V | 1.5V @ 250µA | 12nC @ 10V | 660pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,842
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 4.1A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.56W (Tc) | P-Channel | - | 30V | 4.1A (Tc) | 65 mOhm @ 4A, 10V | 900mV @ 250µA | 6.4nC @ 4.5V | 810pF @ 15V | 2.5V, 10V | ±12V | |||
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VIEW |
2,136
In-stock
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Vishay Siliconix | MOSFET P-CHAN 40V SO23 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 3W (Tc) | P-Channel | - | 40V | 4.1A (Tc) | 94 mOhm @ 10A, 10V | 2.5V @ 250µA | 12nC @ 10V | 420pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,184
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 4.1A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.56W (Tc) | P-Channel | - | 20V | 4.1A (Tc) | 65 mOhm @ 3A, 4.5V | 800mV @ 250µA | 5.1nC @ 4.5V | 515pF @ 10V | 1.8V, 4.5V | ±10V |