- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,762
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 5.7A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 100V | 5.7A (Ta) | 25 mOhm @ 9.3A, 10V | 4V @ 250µA | 44nC @ 10V | - | 6V, 10V | ±20V | |||
|
|
VIEW |
1,641
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 5.7A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 100V | 5.7A (Ta) | 25 mOhm @ 9.3A, 10V | 4V @ 250µA | 44nC @ 10V | - | 6V, 10V | ±20V | |||
|
VIEW |
835
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 5.7A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | P-Channel | 30V | 5.7A (Ta) | 30 mOhm @ 7.5A, 10V | 3V @ 250µA | 20nC @ 5V | - | 4.5V, 10V | ±20V | |||
