- Operating Temperature :
- Package / Case :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,827
In-stock
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ON Semiconductor | MOSFET P-CH 60V 5.7A 8-WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 40W (Tc) | P-Channel | 60V | 5.7A (Ta) | 52 mOhm @ 6A, 10V | 3V @ 250µA | 25nC @ 10V | 1258pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,530
In-stock
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Diodes Incorporated | MOSFETP-CH 60VPOWERDI5060-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.3W | P-Channel | 60V | 5.7A (Ta) | 50 mOhm @ 5A, 10V | 3V @ 250µA | 30nC @ 10V | 2.163nF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,101
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 5.7A SOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 1.6W (Ta) | P-Channel | 30V | 5.7A (Ta) | 48 mOhm @ 5.3A, 10V | 3V @ 250µA | 18.09nC @ 10V | 1047.98pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
835
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 5.7A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | P-Channel | 30V | 5.7A (Ta) | 30 mOhm @ 7.5A, 10V | 3V @ 250µA | 20nC @ 5V | - | 4.5V, 10V | ±20V | |||
