- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,076
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 3A SSOT-6 | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-SSOT | 1.5W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3A (Ta) | 150 mOhm @ 3A, 4.5V | 1.5V @ 250µA | 4.7nC @ 10V | 445pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
3,678
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | |||
