Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
MCH3374-TL-W
RFQ
VIEW
RFQ
2,398
In-stock
ON Semiconductor MOSFET P-CH 12V 3A MCPH3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads SC-70FL/MCPH3 1W (Ta) P-Channel 12V 3A (Ta) 70 mOhm @ 1.5A, 4.5V 1.4V @ 1mA 5.6nC @ 4.5V 405pF @ 6V 1.8V, 4V ±8V
SSM3K302T(TE85L,F)
RFQ
VIEW
RFQ
3,678
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 3A TSM - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel 30V 3A (Ta) 71 mOhm @ 2A, 4V - 4.3nC @ 4V 270pF @ 10V 1.8V, 4V ±12V