Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RW1A030APT2CR
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2,542
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Rohm Semiconductor MOSFET P-CH 12V 3A WEMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-WEMT 700mW (Ta) P-Channel 12V 3A (Ta) 42 mOhm @ 3A, 4.5V 1V @ 1mA 22nC @ 4.5V 2700pF @ 6V 1.5V, 4.5V -8V
RZF030P01TL
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RFQ
3,647
In-stock
Rohm Semiconductor MOSFET P-CH 12V 3A TUMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads TUMT3 800mW (Ta) P-Channel 12V 3A (Ta) 39 mOhm @ 3A, 4.5V 1V @ 1mA 18nC @ 4.5V 1860pF @ 6V 1.5V, 4.5V ±10V
SSM3K344R,LF
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RFQ
3,080
In-stock
Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel 20V 3A (Ta) 71 mOhm @ 3A, 4.5V 1V @ 1mA 2nC @ 4V 153pF @ 10V 1.5V, 4.5V ±8V
RQ5A030APTL
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RFQ
691
In-stock
Rohm Semiconductor MOSFET P-CH 12V 3A TSMT3 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-96 TSMT3 1W (Ta) P-Channel 12V 3A (Ta) 62 mOhm @ 3A, 4.5V 1V @ 1mA 16nC @ 4.5V 2000pF @ 6V 1.5V, 4.5V -8V