Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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EPC2012
RFQ
VIEW
RFQ
2,271
In-stock
EPC TRANS GAN 200V 3A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die - N-Channel - 200V 3A (Ta) 100 mOhm @ 3A, 5V 2.5V @ 1mA 1.8nC @ 5V 145pF @ 100V 5V +6V, -5V
FDS2170N7
RFQ
VIEW
RFQ
3,464
In-stock
ON Semiconductor MOSFET N-CH 200V 3A 8-SOIC PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 3W (Ta) N-Channel - 200V 3A (Ta) 128 mOhm @ 3A, 10V 4.5V @ 250µA 36nC @ 10V 1292pF @ 100V 10V ±20V
FDS2170N3
RFQ
VIEW
RFQ
3,350
In-stock
ON Semiconductor MOSFET N-CH 200V 3A 8-SOIC PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 3W (Ta) N-Channel - 200V 3A (Ta) 128 mOhm @ 3A, 10V 4.5V @ 250µA 36nC @ 10V 1292pF @ 100V 10V ±20V
2SK2887TL
RFQ
VIEW
RFQ
2,791
In-stock
Rohm Semiconductor MOSFET N-CH 200V 3A DPAK - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 20W (Tc) N-Channel - 200V 3A (Ta) 900 mOhm @ 1.5A, 10V 4V @ 1mA 8.5nC @ 10V 230pF @ 10V 10V ±30V
FDS2670
RFQ
VIEW
RFQ
3,643
In-stock
ON Semiconductor MOSFET N-CH 200V 3A 8-SO PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 200V 3A (Ta) 130 mOhm @ 3A, 10V 4.5V @ 250µA 43nC @ 10V 1228pF @ 100V 10V ±20V