- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,553
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 2.7nC @ 10V | 551.57pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
1,363
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 98 mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V |