Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Nexperia USA Inc. MOSFET N-CH 100V 3A SOT223 TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta), 8.3W (Tc) N-Channel - 100V 3A (Ta) 90 mOhm @ 3A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 10V ±20V
FDFS2P106A
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ON Semiconductor MOSFET P-CH 60V 3A 8-SOIC PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 900mW (Ta) P-Channel Schottky Diode (Isolated) 60V 3A (Ta) 110 mOhm @ 3A, 10V 3V @ 250µA 21nC @ 10V 714pF @ 30V 4.5V, 10V ±20V
SI7898DP-T1-GE3
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Vishay Siliconix MOSFET N-CH 150V 3A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel - 150V 3A (Ta) 85 mOhm @ 3.5A, 10V 4V @ 250µA 21nC @ 10V - 6V, 10V ±20V
SI7898DP-T1-E3
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2,692
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Vishay Siliconix MOSFET N-CH 150V 3A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel - 150V 3A (Ta) 85 mOhm @ 3.5A, 10V 4V @ 250µA 21nC @ 10V - 6V, 10V ±20V