Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2103T100
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3,462
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Rohm Semiconductor MOSFET N-CH 30V 2A SOT-89 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA MPT3 500mW (Ta) N-Channel 30V 2A (Ta) 400 mOhm @ 1A, 10V 2.5V @ 1mA - 230pF @ 10V 4V, 10V ±20V
SSM3J117TU,LF
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971
In-stock
Toshiba Semiconductor and Storage MOSFET P-CHANNEL 30V 2A UFM U-MOSII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel 30V 2A (Ta) 117 mOhm @ 1A, 10V 2.6V @ 1mA - 280pF @ 15V 4V, 10V ±20V
RHP020N06T100
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RFQ
763
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Rohm Semiconductor MOSFET N-CH 60V 2A SOT-89 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA MPT3 500mW (Ta) N-Channel 60V 2A (Ta) 200 mOhm @ 2A, 10V 2.5V @ 1mA 14nC @ 10V 140pF @ 10V 4V, 10V ±20V