- Manufacture :
- Operating Temperature :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,304
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 1.3A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | Schottky Diode (Isolated) | 12V | 1.3A (Ta) | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | 1.5V, 4.5V | ±10V | ||||
VIEW |
3,549
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 1.3A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | P-Channel | - | 12V | 1.3A (Ta) | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | 1.5V, 4.5V | ±10V | ||||
VIEW |
3,445
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 1.3A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1006-3 | 500mW (Ta) | N-Channel | - | 20V | 1.3A (Ta) | 175 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 64.3pF @ 25V | 1.5V, 4.5V | ±8V |