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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,893
In-stock
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Vishay Siliconix | MOSFET N-CH 150V 13A 1212-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.8W (Ta), 5.2W (Tc) | N-Channel | - | 150V | 13A (Tc) | 126 mOhm @ 3.6A, 10V | 4.5V @ 250µA | 15nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
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VIEW |
3,703
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
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VIEW |
3,749
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
