Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFR6215TRLPBF
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860
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Infineon Technologies MOSFET P-CH 150V 13A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) P-Channel - 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V
IRF6215STRRPBF
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2,314
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Infineon Technologies MOSFET P-CH 150V 13A D2PAK HEXFET® Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 150V 13A (Tc) 290 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V
IRF6215STRLPBF
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RFQ
1,389
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Infineon Technologies MOSFET P-CH 150V 13A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) P-Channel - 150V 13A (Tc) 290 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V
IRFR6215TRPBF
RFQ
VIEW
RFQ
3,209
In-stock
Infineon Technologies MOSFET P-CH 150V 13A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 110W (Tc) P-Channel - 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V