Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSC093N15NS5ATMA1
RFQ
VIEW
RFQ
883
In-stock
Infineon Technologies MOSFET N-CH 150V 87A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 139W (Tc) N-Channel - 150V 87A (Tc) 9.3 mOhm @ 44A, 10V 4.6V @ 107µA 40.7nC @ 10V 3230pF @ 75V 8V, 10V ±20V
IPB108N15N3GATMA1
RFQ
VIEW
RFQ
1,687
In-stock
Infineon Technologies MOSFET N-CH 150V 83A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 214W (Tc) N-Channel - 150V 83A (Tc) 10.8 mOhm @ 83A, 10V 4V @ 160µA 55nC @ 10V 3230pF @ 75V 8V, 10V ±20V