Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF6643TR1PBF
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2,645
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Infineon Technologies MOSFET N-CH 150V 6.2A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 150V 6.2A (Ta), 35A (Tc) 34.5 mOhm @ 7.6A, 10V 4.9V @ 150µA 55nC @ 10V 2340pF @ 25V 10V ±20V
IRF6643TRPBF
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3,143
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Infineon Technologies MOSFET N-CH 150V 6.2A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel - 150V 6.2A (Ta), 35A (Tc) 34.5 mOhm @ 7.6A, 10V 4.9V @ 150µA 55nC @ 10V 2340pF @ 25V 10V ±20V
PSMN063-150D,118
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2,851
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Nexperia USA Inc. MOSFET N-CH 150V 29A DPAK TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 150W (Tc) N-Channel - 150V 29A (Tc) 63 mOhm @ 15A, 10V 4V @ 1mA 55nC @ 10V 2390pF @ 25V 10V ±20V
IPB108N15N3GATMA1
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1,687
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Infineon Technologies MOSFET N-CH 150V 83A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 214W (Tc) N-Channel - 150V 83A (Tc) 10.8 mOhm @ 83A, 10V 4V @ 160µA 55nC @ 10V 3230pF @ 75V 8V, 10V ±20V