Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB048N15N5ATMA1
RFQ
VIEW
RFQ
3,428
In-stock
Infineon Technologies MOSFET N-CH 150V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3 300W (Tc) N-Channel 150V 120A (Tc) 4.8 mOhm @ 60A, 10V 4.6V @ 264µA 100nC @ 10V 7800pF @ 75V 8V, 10V ±20V
IPB044N15N5ATMA1
RFQ
VIEW
RFQ
3,219
In-stock
Infineon Technologies MOSFET N-CH 150V 174A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA PG-TO263-7 300W (Tc) N-Channel 150V 174A (Tc) 4.4 mOhm @ 87A, 10V 4.6V @ 264µA 100nC @ 10V 8000pF @ 75V 8V, 10V ±20V
FDB075N15A
RFQ
VIEW
RFQ
817
In-stock
ON Semiconductor MOSFET N-CH 150V 130A D2PAK PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 333W (Tc) N-Channel 150V 130A (Tc) 7.5 mOhm @ 100A, 10V 4V @ 250µA 100nC @ 10V 7350pF @ 75V 10V ±20V
NTB35N15T4G
RFQ
VIEW
RFQ
2,150
In-stock
ON Semiconductor MOSFET N-CH 150V 37A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 2W (Ta), 178W (Tj) N-Channel 150V 37A (Ta) 50 mOhm @ 18.5A, 10V 4V @ 250µA 100nC @ 10V 3200pF @ 25V 10V ±20V