Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Taiwan Semiconductor Corporation MOSFET N-CH 150V 1.4A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 2.1W (Tc) N-Channel - 150V 1.4A (Tc) 480 mOhm @ 1.1A, 10V 3.5V @ 250µA 8nC @ 10V 332pF @ 10V 6V, 10V ±20V
SI3440DV-T1-E3
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2,804
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Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) N-Channel - 150V 1.2A (Ta) 375 mOhm @ 1.5A, 10V 4V @ 250µA 8nC @ 10V - 6V, 10V ±20V
SI3440DV-T1-GE3
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2,458
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Vishay Siliconix MOSFET N-CH 150V 1.2A 6-TSOP TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.14W (Ta) N-Channel - 150V 1.2A (Ta) 375 mOhm @ 1.5A, 10V 4V @ 250µA 8nC @ 10V - 6V, 10V ±20V
SIA446DJ-T1-GE3
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2,213
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Vishay Siliconix MOSFET N-CH 150V 7.7A SC70-6L ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) N-Channel - 150V 7.7A (Tc) 177 mOhm @ 3A, 10V 3.5V @ 250µA 8nC @ 10V 230pF @ 75V 6V, 10V ±20V