Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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MTD6N15T4
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1,801
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ON Semiconductor MOSFET N-CH 150V 6A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.25W (Ta), 20W (Tc) N-Channel 150V 6A (Tc) 300 mOhm @ 3A, 10V 4.5V @ 1mA 30nC @ 10V 1200pF @ 25V 10V ±20V
MTD6N15T4G
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2,505
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ON Semiconductor MOSFET N-CH 150V 6A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 1.25W (Ta), 20W (Tc) N-Channel 150V 6A (Tc) 300 mOhm @ 3A, 10V 4.5V @ 1mA 30nC @ 10V 1200pF @ 25V 10V ±20V
SI7315DN-T1-GE3
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2,774
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Vishay Siliconix MOSFET P-CH 150V 8.9A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.8W (Ta), 52W (Tc) P-Channel 150V 8.9A (Tc) 315 mOhm @ 2.4A, 10V 4V @ 250µA 30nC @ 10V 880pF @ 75V 7.5V, 10V ±30V
SI7818DN-T1-E3
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650
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Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel 150V 2.2A (Ta) 135 mOhm @ 3.4A, 10V 4V @ 250µA 30nC @ 10V - 6V, 10V ±20V
SI7818DN-T1-GE3
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RFQ
1,613
In-stock
Vishay Siliconix MOSFET N-CH 150V 2.2A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) N-Channel 150V 2.2A (Ta) 135 mOhm @ 3.4A, 10V 4V @ 250µA 30nC @ 10V - 6V, 10V ±20V