Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD530N15N3GBTMA1
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1,016
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Infineon Technologies MOSFET N-CH 150V 21A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 150V 21A (Tc) 53 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 887pF @ 75V 8V, 10V ±20V
SI4409DY-T1-GE3
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1,678
In-stock
Vishay Siliconix MOSFET P-CH 150V 1.3A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.2W (Ta), 4.6W (Tc) P-Channel - 150V 1.3A (Tc) 1.2 Ohm @ 500mA, 10V 4V @ 250µA 12nC @ 10V 332pF @ 50V 6V, 10V ±20V
IPD530N15N3GATMA1
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2,091
In-stock
Infineon Technologies MOSFET N-CH 150V 21A OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 150V 21A (Tc) 53 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 887pF @ 75V 8V, 10V ±20V
BSC520N15NS3GATMA1
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VIEW
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3,967
In-stock
Infineon Technologies MOSFET N-CH 150V 21A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 57W (Tc) N-Channel - 150V 21A (Tc) 52 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 890pF @ 75V 8V, 10V ±20V
BSZ520N15NS3GATMA1
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1,811
In-stock
Infineon Technologies MOSFET N-CH 150V 21A 8-TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 57W (Tc) N-Channel - 150V 21A (Tc) 52 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 890pF @ 75V 8V, 10V ±20V
IPB530N15N3GATMA1
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RFQ
1,976
In-stock
Infineon Technologies MOSFET N-CH 150V 21A TO263-3 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 68W (Tc) N-Channel - 150V 21A (Tc) 53 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 887pF @ 75V 8V, 10V ±20V
SI7117DN-T1-GE3
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RFQ
1,760
In-stock
Vishay Siliconix MOSFET P-CH 150V 2.17A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.2W (Ta), 12.5W (Tc) P-Channel - 150V 2.17A (Tc) 1.2 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V 510pF @ 25V 6V, 10V ±20V
SI7117DN-T1-E3
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RFQ
1,425
In-stock
Vishay Siliconix MOSFET P-CH 150V 2.17A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.2W (Ta), 12.5W (Tc) P-Channel - 150V 2.17A (Tc) 1.2 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V 510pF @ 25V 6V, 10V ±20V
SI2325DS-T1-GE3
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VIEW
RFQ
3,585
In-stock
Vishay Siliconix MOSFET P-CH 150V 0.53A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 150V 530mA (Ta) 1.2 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V 510pF @ 25V 6V, 10V ±20V
SI2325DS-T1-E3
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RFQ
2,698
In-stock
Vishay Siliconix MOSFET P-CH 150V 0.53A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 150V 530mA (Ta) 1.2 Ohm @ 500mA, 10V 4.5V @ 250µA 12nC @ 10V 510pF @ 25V 6V, 10V ±20V