Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH5900CNH,L1Q
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Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 150V 9A (Ta) 59 mOhm @ 4.5A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 75V 10V ±20V
FQD5N15TM
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672
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ON Semiconductor MOSFET N-CH 150V 4.3A DPAK QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 30W (Tc) N-Channel - 150V 4.3A (Tc) 800 mOhm @ 2.15A, 10V 4V @ 250µA 7nC @ 10V 230pF @ 25V 10V ±25V
TPN5900CNH,L1Q
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3,749
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Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 150V 9A (Ta) 59 mOhm @ 4.5A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 75V 10V ±20V
FDT86244
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934
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ON Semiconductor MOSFET N-CH 150V 2.8A SOT-223 PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.2W (Ta) N-Channel - 150V 2.8A (Tc) 128 mOhm @ 2.8A, 10V 4V @ 250µA 7nC @ 10V 395pF @ 75V 6V, 10V ±20V
BSZ900N15NS3GATMA1
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3,581
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Infineon Technologies MOSFET N-CH 150V 13A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 38W (Tc) N-Channel - 150V 13A (Tc) 90 mOhm @ 10A, 10V 4V @ 20µA 7nC @ 10V 510pF @ 75V 8V, 10V ±20V