Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN059-150Y,115
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3,341
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Nexperia USA Inc. MOSFET N-CH 150V 43A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 113W (Tc) N-Channel - 150V 43A (Tc) 59 mOhm @ 12A, 10V 4V @ 1mA 27.9nC @ 10V 1529pF @ 30V 10V ±20V
IRF3415STRLPBF
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1,932
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Infineon Technologies MOSFET N-CH 150V 43A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 200W (Tc) N-Channel - 150V 43A (Tc) 42 mOhm @ 22A, 10V 4V @ 250µA 200nC @ 10V 2400pF @ 25V 10V ±20V