Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDMC2523P
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ON Semiconductor MOSFET P-CH 150V 3A MLP 3.3SQ QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN 8-MLP (3.3x3.3) 42W (Tc) P-Channel - 150V 3A (Tc) 1.5 Ohm @ 1.5A, 10V 5V @ 250µA 9nC @ 10V 270pF @ 25V 10V ±30V
IRF6217TRPBF
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1,048
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Infineon Technologies MOSFET P-CH 150V 0.7A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 150V 700mA (Ta) 2.4 Ohm @ 420mA, 10V 5V @ 250µA 9nC @ 10V 150pF @ 25V 10V ±20V
IRF6216TRPBF
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801
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Infineon Technologies MOSFET P-CH 150V 2.2A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 150V 2.2A (Ta) 240 mOhm @ 1.3A, 10V 5V @ 250µA 49nC @ 10V 1280pF @ 25V 10V ±20V
IRF6218STRLPBF
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2,610
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Infineon Technologies MOSFET P-CH 150V 27A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) P-Channel - 150V 27A (Tc) 150 mOhm @ 16A, 10V 5V @ 250µA 110nC @ 10V 2210pF @ 25V 10V ±20V