Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH5900CNH,L1Q
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3,703
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Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 150V 9A (Ta) 59 mOhm @ 4.5A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 75V 10V ±20V
FDMT800150DC
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2,600
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ON Semiconductor MOSFET N-CH 150V 15A Dual Cool™, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-Dual Cool™88 3.2W (Ta), 156W (Tc) N-Channel - 150V 15A (Ta), 99A (Tc) 6.5 mOhm @ 15A, 10V 4V @ 250µA 108nC @ 10V 8205pF @ 75V 6V, 10V ±20V
TPN5900CNH,L1Q
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3,749
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Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 150V 9A (Ta) 59 mOhm @ 4.5A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 75V 10V ±20V
TPH3300CNH,L1Q
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1,726
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Toshiba Semiconductor and Storage MOSFET N-CH 150V 18A 8-SOP U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 150V 18A (Ta) 33 mOhm @ 9A, 10V 4V @ 300µA 10.6nC @ 10V 1100pF @ 75V 10V ±20V