Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FDB0630N1507L
RFQ
VIEW
RFQ
957
In-stock
ON Semiconductor MOSFET N-CH 150V 130A PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D²PAK (TO-263) 3.8W (Ta), 300W (Tc) N-Channel - 150V 130A (Tc) 6.4 mOhm @ 18A, 10V 4V @ 250µA 135nC @ 10V 9895pF @ 75V 10V ±20V
IRFS4321TRL7PP
RFQ
VIEW
RFQ
3,398
In-stock
Infineon Technologies MOSFET N-CH 150V 86A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) D2PAK-7 350W (Tc) N-Channel - 150V 86A (Tc) 14.7 mOhm @ 34A, 10V 5V @ 250µA 110nC @ 10V 4460pF @ 50V 10V ±30V