Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD530N15N3GBTMA1
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1,016
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Infineon Technologies MOSFET N-CH 150V 21A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 150V 21A (Tc) 53 mOhm @ 18A, 10V 4V @ 35µA 12nC @ 10V 887pF @ 75V 8V, 10V ±20V
IPB072N15N3GE8187ATMA1
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1,396
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Infineon Technologies MOSFET N-CH 150V 100A TO263-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 150V 100A (Tc) 7.2 mOhm @ 100A, 10V 4V @ 270µA 93nC @ 10V 5470pF @ 75V 8V, 10V ±20V
IPB065N15N3GE8187ATMA1
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3,145
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Infineon Technologies MOSFET N-CH 150V 130A TO263-7 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB PG-TO263-7 300W (Tc) N-Channel - 150V 130A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 270µA 93nC @ 10V 7300pF @ 75V 8V, 10V ±20V
IPD200N15N3GBTMA1
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1,842
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Infineon Technologies MOSFET N-CH 150V 50A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 150W (Tc) N-Channel - 150V 50A (Tc) 20 mOhm @ 50A, 10V 4V @ 90µA 31nC @ 10V 1820pF @ 75V 8V, 10V ±20V