- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,678
In-stock
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Vishay Siliconix | MOSFET P-CH 150V 1.3A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.2W (Ta), 4.6W (Tc) | P-Channel | - | 150V | 1.3A (Tc) | 1.2 Ohm @ 500mA, 10V | 4V @ 250µA | 12nC @ 10V | 332pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
1,048
In-stock
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Infineon Technologies | MOSFET P-CH 150V 0.7A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 150V | 700mA (Ta) | 2.4 Ohm @ 420mA, 10V | 5V @ 250µA | 9nC @ 10V | 150pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,201
In-stock
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ON Semiconductor | MOSFET P-CH 150V | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1W (Ta) | P-Channel | - | 150V | 2.2A (Ta) | 255 mOhm @ 2.2A, 10V | 4V @ 250µA | 16nC @ 10V | 1130pF @ 75V | 6V, 10V | ±25V | |||
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|
VIEW |
1,893
In-stock
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Vishay Siliconix | MOSFET P-CH 150V 2A 8-SO | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 5.9W (Tc) | P-Channel | - | 150V | 2A (Ta) | 295 mOhm @ 4A, 10V | 4V @ 250µA | 42nC @ 10V | 1190pF @ 50V | 6V, 10V | ±20V | |||
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|
VIEW |
801
In-stock
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Infineon Technologies | MOSFET P-CH 150V 2.2A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 150V | 2.2A (Ta) | 240 mOhm @ 1.3A, 10V | 5V @ 250µA | 49nC @ 10V | 1280pF @ 25V | 10V | ±20V | |||
