- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
882
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | N-Channel | - | 100V | 4.6A (Tc) | 105 mOhm @ 5A, 10V | 4.5V @ 250µA | 13nC @ 10V | 446pF @ 50V | 10V | ±20V | ||||
VIEW |
2,307
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.1A DFET SB | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric SB | DIRECTFET SB | 2.4W (Ta), 30W (Tc) | N-Channel | - | 100V | 4.1A (Ta), 14.4A (Tc) | 62 mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | 515pF @ 25V | 10V | ±20V | ||||
VIEW |
1,543
In-stock
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Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V |