- Manufacture :
- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
946
In-stock
|
EPC | MOSFET N-CH 100V 1.7A DIE | - | Obsolete | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1.7A (Ta) | - | 2.5V @ 600µA | - | 90pF @ 50V | 5V | +6V, -4V | |||
|
VIEW |
2,046
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 300 mOhm @ 1.7A, 10V | 4V @ 1mA | - | 550pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,063
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 310 mOhm @ 1.7A, 5V | 2V @ 1mA | - | 520pF @ 25V | 5V | ±14V | |||
|
VIEW |
1,264
In-stock
|
Diodes Incorporated | MOSFET P-CH 100V 1.7A SOT223 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | - | 100V | 1.7A (Ta) | 350 mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | 6V, 10V | ±20V | |||
|
|
VIEW |
3,199
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 1.7A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 350 mOhm @ 2.6A, 10V | 4V @ 250µA | 5.4nC @ 10V | 274pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
1,361
In-stock
|
EPC | TRANS GAN 100V 550MOHM BUMPED DI | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 1.7A (Ta) | 550 mOhm @ 100mA, 5V | 2.5V @ 80µA | 0.12nC @ 5V | 14pF @ 50V | 5V | +6V, -4V | |||
