Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRLH5030TR2PBF
RFQ
VIEW
RFQ
3,170
In-stock
Infineon Technologies MOSFET N-CH 100V 13A 8PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) Single Die 3.6W (Ta), 156W (Tc) N-Channel - 100V 13A (Ta), 100A (Tc) 9 mOhm @ 50A, 10V 2.5V @ 150µA 94nC @ 10V 5185pF @ 50V 4.5V, 10V ±16V
SISS71DN-T1-GE3
RFQ
VIEW
RFQ
1,372
In-stock
Vishay Siliconix MOSFET P-CH 100V 23A 1212-8 ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 57W (Tc) P-Channel - 100V 23A (Tc) 59 mOhm @ 5A, 10V 2.5V @ 250µA 15nC @ 4.5V 1050pF @ 50V 4.5V, 10V ±20V
IRLH5030TRPBF
RFQ
VIEW
RFQ
1,235
In-stock
Infineon Technologies MOSFET N-CH 100V 13A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 100V 13A (Ta), 100A (Tc) 9 mOhm @ 50A, 10V 2.5V @ 150µA 94nC @ 10V 5185pF @ 50V 4.5V, 10V ±16V