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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,377
In-stock
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Texas Instruments | MOSFET N-CH 30V 5A | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.4W (Ta), 17W (Tc) | N-Channel | - | 30V | 5A (Ta) | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | 3V, 8V | +10V, -8V | |||
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1,368
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,047
In-stock
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Texas Instruments | MOSFET N-CH 30V 5A 6SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.3W (Ta) | N-Channel | - | 30V | 5A (Tc) | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | 3V, 8V | +10V, -8V | |||
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3,039
In-stock
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Texas Instruments | MOSFET N-CH 30V 5A 6SON | Automotive, AEC-Q100, NexFET™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 2.3W (Ta) | N-Channel | - | 30V | 5A (Tc) | 30 mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | 3V, 8V | +10V, -8V | |||
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729
In-stock
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ON Semiconductor | MOSFET N-CH 30V 3.6A 6-WDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | N-Channel | - | 30V | 3.6A (Ta) | 35 mOhm @ 2A, 4.5V | 1V @ 250µA | 13nC @ 4.5V | 650pF @ 15V | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,126
In-stock
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Texas Instruments | MOSFET N-CHANNEL 30V 25A 6WSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WSON (2x2) | 16W (Tc) | N-Channel | - | 30V | 25A (Tc) | 15.1 mOhm @ 8A, 8V | 1.2V @ 250µA | 6nC @ 4.5V | 879pF @ 15V | 2.5V, 8V | ±10V | |||
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2,090
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 10A 6UDFN | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | - | 30V | 10A (Ta) | 20 mOhm @ 4A, 10V | 2.2V @ 250µA | 20.4nC @ 4.5V | 1150pF @ 15V | 4V, 10V | +20V, -25V | |||
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VIEW |
1,163
In-stock
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ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,496
In-stock
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Toshiba Semiconductor and Storage | MOSFET NCH 30V 15A UDFNB | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 15A (Ta) | 8.9 mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5nC @ 4.5V | 1130pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,889
In-stock
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Texas Instruments | MOSFET N-CH 30V 22A 6SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-SON (2x2) | 2.5W (Ta) | N-Channel | - | 30V | 22A (Ta) | 29 mOhm @ 5A, 4.5V | 2V @ 250µA | 3.1nC @ 4.5V | 468pF @ 15V | 4.5V, 10V | ±20V | |||
