- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 15.3 mOhm @ 4A, 4.5V (1)
- 22.1 mOhm @ 3A, 4.5V (1)
- 22.1 mOhm @ 6A, 8V (1)
- 22.5 mOhm @ 6A, 4.5V (1)
- 23.1 mOhm @ 4A, 4.5V (1)
- 29.8 mOhm @ 3A, 4.5V (1)
- 30.1 mOhm @ 4A, 4.5V (1)
- 32.4 mOhm @ 3A, 4.5V (1)
- 33 mOhm @ 4A, 4.5V (1)
- 43 mOhm @ 3.5A, 4.5V (1)
- 55 mOhm @ 3A, 4.5V (1)
- 57 mOhm @ 800mA, 4.5V (1)
- 71 mOhm @ 3A, 4.5V (1)
- 93 mOhm @ 1.5A, 4.5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
14 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,763
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 9.5A (Ta) | 22.1 mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,189
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1W (Ta) | N-Channel | - | 20V | 800mA (Ta) | 57 mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 1.2V, 4.5V | ±8V | |||
|
VIEW |
1,447
In-stock
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Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 30.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | 1.8V, 4.5V | ±10V | |||
|
VIEW |
727
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A UF6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,380
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
702
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,278
In-stock
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Rohm Semiconductor | NCH 20V 3.5A POWER MOSFET | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 | 1W (Ta) | N-Channel | - | 20V | 3.5A (Ta) | 43 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 5.7nC @ 4.5V | 460pF @ 10V | 1.5V, 4.5V | ±10V | |||
|
VIEW |
1,562
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 4A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 20V | 4A (Ta) | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
1,851
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,080
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 20V | 3A (Ta) | 71 mOhm @ 3A, 4.5V | 1V @ 1mA | 2nC @ 4V | 153pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,375
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,868
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 3.9A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
2,455
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.1 mOhm @ 6A, 8V | 1V @ 1mA | 38.5nC @ 8V | 1331pF @ 10V | 1.8V, 8V | ±10V | |||
|
VIEW |
712
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V |