- Manufacture :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,822
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 2A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 320mW (Ta) | N-Channel | - | 20V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 180pF @ 10V | 1.5V, 4.5V | ±10V | |||
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VIEW |
3,657
In-stock
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Rohm Semiconductor | MOSFET N-CH 20V 1.5A TUMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | N-Channel | - | 20V | 1.5A (Ta) | 180 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 2.5nC @ 4.5V | 110pF @ 10V | 1.8V, 4.5V | ±10V | |||
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VIEW |
601
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V | |||
