- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
623
In-stock
|
Texas Instruments | MOSFET P-CH 20V 5A 6SON | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 6-SON | 2.4W (Ta) | P-Channel | 20V | 5A (Tc) | 49 mOhm @ 3A, 4.5V | 900mV @ 250µA | 3.4nC @ 4.5V | 350pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,763
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | 20V | 9.5A (Ta) | 22.1 mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
727
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A UF6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | 20V | 6A (Ta) | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
3,196
In-stock
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Rohm Semiconductor | MOSFET P-CHANNEL 20V 5.5A TUMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | TUMT6 | 1W (Tc) | P-Channel | 20V | 5.5A (Ta) | 25.8 mOhm @ 5.5A, 4.5V | 1.2V @ 1mA | 15.2nC @ 4.5V | 1080pF @ 10V | 4.5V | ±8V | |||
