- Series :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,746
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 10A UDFN6B | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | P-Channel | 12V | 10A (Ta) | 16.2 mOhm @ 4A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
|
VIEW |
2,490
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A SOT23F | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | 12V | 6A (Ta) | 17.6 mOhm @ 6A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | 1400pF @ 6V | 1.8V, 8V | ±10V | |||
|
VIEW |
3,900
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 20V 6.5A SOT26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 1.56W (Tc) | P-Channel | 20V | 6.5A (Tc) | 26 mOhm @ 5A, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | 1670pF @ 15V | 1.8V, 4.5V | ±10V | |||
