Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RZQ050P01TR
RFQ
VIEW
RFQ
2,702
In-stock
Rohm Semiconductor MOSFET P-CH 12V 5A TSMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 600mW (Ta) P-Channel 12V 5A (Ta) 26 mOhm @ 5A, 4.5V 1V @ 1mA 35nC @ 4.5V 2850pF @ 6V 1.5V, 4.5V ±10V
TSM260P02CX6 RFG
RFQ
VIEW
RFQ
3,900
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 6.5A SOT26 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-26 1.56W (Tc) P-Channel 20V 6.5A (Tc) 26 mOhm @ 5A, 4.5V 1V @ 250µA 19.5nC @ 4.5V 1670pF @ 15V 1.8V, 4.5V ±10V
RT1A050ZPTR
RFQ
VIEW
RFQ
3,452
In-stock
Rohm Semiconductor MOSFET P-CH 12V 5A TSST8 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead 8-TSST 600mW (Ta) P-Channel 12V 5A (Ta) 26 mOhm @ 5A, 4.5V 1V @ 1mA 34nC @ 4.5V 2800pF @ 6V 1.5V, 4.5V ±10V