- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
607
In-stock
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ON Semiconductor | MOSFET P-CH 20V 1.5A SOT563 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563/SCH6 | 1W (Ta) | P-Channel | - | 20V | 1.5A (Ta) | 241 mOhm @ 750mA, 4.5V | 1.4V @ 1mA | 1.7nC @ 4.5V | 120pF @ 10V | 1.8V, 4.5V | ±10V | |||
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VIEW |
3,472
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.5A SOT563 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563/SCH6 | 1W (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 95 mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 4.6nC @ 4.5V | 375pF @ 10V | 1.8V, 4.5V | ±10V | |||
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VIEW |
1,989
In-stock
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ON Semiconductor | MOSFET P-CH 12V 3A SCH6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563/SCH6 | 1W (Ta) | P-Channel | - | 12V | 3A (Ta) | 84 mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 5.6nC @ 4.5V | 405pF @ 6V | 1.5V, 4.5V | ±10V | |||
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VIEW |
3,718
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 0.1A ES6 | π-MOSVI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 150mW (Ta) | P-Channel | - | 20V | 100mA (Ta) | 8 Ohm @ 10mA, 4V | - | - | 11pF @ 3V | 1.5V, 4V | ±10V | |||
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VIEW |
3,515
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 1.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | P-Channel | - | 12V | 1.5A (Ta) | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | 1.5V, 4.5V | ±10V | |||
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VIEW |
3,695
In-stock
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Rohm Semiconductor | MOSFET P-CH 20V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 65 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 21nC @ 4.5V | 1300pF @ 10V | 1.5V, 4.5V | ±10V | |||
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VIEW |
2,252
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 2A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 12V | 2A (Ta) | 105 mOhm @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | 1.5V, 4.5V | ±10V | |||
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VIEW |
1,304
In-stock
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Rohm Semiconductor | MOSFET P-CH 12V 1.3A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | Schottky Diode (Isolated) | 12V | 1.3A (Ta) | 260 mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | 290pF @ 6V | 1.5V, 4.5V | ±10V | |||
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VIEW |
3,324
In-stock
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Rohm Semiconductor | MOSFET P-CH 20V 2.5A WEMT6 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 70 mOhm @ 2.5A, 4.5V | 1V @ 1mA | 10nC @ 4.5V | 1250pF @ 10V | 1.5V, 4.5V | ±10V | |||
