Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMP3008SFG-7
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VIEW
RFQ
615
In-stock
Diodes Incorporated MOSFET P-CH 30V 8.6A POWERDI - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
SI7143DP-T1-GE3
RFQ
VIEW
RFQ
2,774
In-stock
Vishay Siliconix MOSFET P-CH 30V 35A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 4.2W (Ta), 35.7W (Tc) P-Channel 30V 35A (Tc) 10 mOhm @ 16.1A, 10V 2.8V @ 250µA 71nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
DMP3008SFGQ-7
RFQ
VIEW
RFQ
1,884
In-stock
Diodes Incorporated MOSFET P-CH 30V 8.6A PWRDI3333-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V
DMP3008SFGQ-13
RFQ
VIEW
RFQ
1,010
In-stock
Diodes Incorporated MOSFET P-CH 30V 8.6A PWRDI3333-8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) P-Channel 30V 8.6A (Ta) 17 mOhm @ 10A, 10V 2.1V @ 250µA 47nC @ 10V 2230pF @ 15V 4.5V, 10V ±20V