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- Current - Continuous Drain (Id) @ 25°C :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,528
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,704
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
861
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,737
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 3.3A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 3.3A (Ta) | 85 mOhm @ 3.05A, 10V | 2.2V @ 250µA | 7.8nC @ 10V | 353pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,455
In-stock
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Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 60V | 1.17A (Ta) | 800 mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | 160pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,088
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 4A SOT-26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 1.25W (Ta) | P-Channel | - | 30V | 4A (Ta) | 65 mOhm @ 4A, 10V | 2.1V @ 250µA | 7.8nC @ 10V | 336pF @ 25V | 4.5V, 10V | ±20V |