Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFHS9301TR2PBF
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3,258
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Infineon Technologies MOSFET P-CH 30V 6A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 6-PQFN (2x2) 2.1W (Ta) P-Channel - 30V 6A (Ta), 13A (Tc) 37 mOhm @ 7.8A, 10V 2.4V @ 25µA 13nC @ 10V 580pF @ 25V 4.5V, 10V ±20V
IRFTS9342TRPBF
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3,177
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Infineon Technologies MOSFET P-CH 30V 5.8A 6TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 6-TSOP 2W (Ta) P-Channel - 30V 5.8A (Ta) 40 mOhm @ 5.8A, 10V 2.4V @ 25µA 12nC @ 10V 595pF @ 25V 4.5V, 10V ±20V
IRF9333TRPBF
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2,196
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Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V
IRFHS9301TRPBF
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RFQ
3,445
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Infineon Technologies MOSFET P-CH 30V 6A PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 6-PQFN (2x2) 2.1W (Ta) P-Channel - 30V 6A (Ta), 13A (Tc) 37 mOhm @ 7.8A, 10V 2.4V @ 25µA 13nC @ 10V 580pF @ 25V 4.5V, 10V ±20V
IRF9328TRPBF
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2,971
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Infineon Technologies MOSFET P-CH 30V 12A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 12A (Tc) 11.9 mOhm @ 12A, 10V 2.4V @ 25µA 52nC @ 10V 1680pF @ 25V 4.5V, 10V ±20V