- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,258
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | P-Channel | - | 30V | 6A (Ta), 13A (Tc) | 37 mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,177
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.8A 6TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 40 mOhm @ 5.8A, 10V | 2.4V @ 25µA | 12nC @ 10V | 595pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
2,196
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 9.2A (Ta) | 19.4 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
3,445
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | P-Channel | - | 30V | 6A (Ta), 13A (Tc) | 37 mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | 580pF @ 25V | 4.5V, 10V | ±20V | ||||
VIEW |
2,971
In-stock
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Infineon Technologies | MOSFET P-CH 30V 12A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 12A (Tc) | 11.9 mOhm @ 12A, 10V | 2.4V @ 25µA | 52nC @ 10V | 1680pF @ 25V | 4.5V, 10V | ±20V |