Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SQS481ENW-T1_GE3
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2,200
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Vishay Siliconix MOSFET P-CH 150V 4.7A 1212-8 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 62.5W (Tc) P-Channel 150V 4.7A (Tc) 1.095 Ohm @ 5A, 10V 3.5V @ 250µA 11nC @ 10V 385pF @ 75V 10V ±20V
SI9407BDY-T1-GE3
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3,635
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Vishay Siliconix MOSFET P-CH 60V 4.7A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.4W (Ta), 5W (Tc) P-Channel 60V 4.7A (Tc) 120 mOhm @ 3.2A, 10V 3V @ 250µA 22nC @ 10V 600pF @ 30V 4.5V, 10V ±20V
SI9407BDY-T1-E3
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2,829
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Vishay Siliconix MOSFET P-CH 60V 4.7A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 5W (Tc) P-Channel 60V 4.7A (Tc) 120 mOhm @ 3.2A, 10V 3V @ 250µA 22nC @ 10V 600pF @ 30V 4.5V, 10V ±20V
TSM600P03CS RLG
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3,769
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Taiwan Semiconductor Corporation MOSFET P-CHANNEL 30V 4.7A 8SOP - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2.1W (Tc) P-Channel 30V 4.7A (Tc) 60 mOhm @ 3A, 10V 2.5V @ 250µA 9.6nC @ 4.5V 560pF @ 15V 4.5V, 10V ±20V