- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,978
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | P-Channel | - | 250V | 190mA (Ta) | 12 Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
733
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,775
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.43A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,581
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | P-Channel | - | 250V | 190mA (Ta) | 12 Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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|
VIEW |
1,861
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,726
In-stock
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Vishay Siliconix | MOSFET P-CH 250V 2.7A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 50W (Tc) | P-Channel | - | 250V | 2.7A (Tc) | 3 Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | 220pF @ 25V | 10V | ±20V | |||
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VIEW |
983
In-stock
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Nexperia USA Inc. | MOSFET P-CH 250V 0.225A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.5W (Ta) | P-Channel | - | 250V | 225mA (Ta) | 15 Ohm @ 200mA, 10V | 2.8V @ 1mA | - | 90pF @ 25V | 10V | ±20V | |||
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VIEW |
3,827
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | P-Channel | - | 250V | 190mA (Ta) | 12 Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
2,469
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,969
In-stock
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Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
2,628
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | P-Channel | - | 250V | 190mA (Ta) | 12 Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
2,107
In-stock
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Infineon Technologies | MOSFET P-CH 250V 140MA SC-59-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SC-59 | 500mW (Tc) | P-Channel | - | 250V | 140mA (Ta) | 11 Ohm @ 140mA, 10V | 1V @ 130µA | 4.8nC @ 10V | 109pF @ 25V | 2.8V, 10V | ±20V | |||
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VIEW |
1,227
In-stock
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Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 430mA (Ta) | 4 Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | 262pF @ 25V | 4.5V, 10V | ±20V | |||
