- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,096
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | U-MOSIII-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | 30V | 5A (Ta) | 59 mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,692
In-stock
|
Diodes Incorporated | MOSFET P-CH 200V 0.12A TO92-3 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 700mW (Ta) | P-Channel | 200V | 120mA (Ta) | 25 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 100pF @ 25V | 10V | ±20V | |||
|
VIEW |
836
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 1.49A SOT23-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | P-Channel | 30V | 1.49A (Ta) | 200 mOhm @ 1.7A, 10V | 3V @ 250µA | 10nC @ 10V | 180pF @ 15V | 4.5V, 10V | ±20V | |||
.JPG)
|
VIEW |
1,698
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 1mA | 34nC @ 10V | 1760pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,835
In-stock
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ON Semiconductor | MOSFET P-CH 30V 3.3A CHIPFET | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ | 700mW (Ta) | P-Channel | 30V | 3.3A (Ta) | 45 mOhm @ 4.4A, 10V | 3V @ 250µA | 28nC @ 10V | 1500pF @ 24V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,731
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 5A TSMT8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 | 700mW (Ta) | P-Channel | 30V | 5A (Ta) | 31 mOhm @ 5A, 10V | 2.5V @ 1mA | 28nC @ 10V | 1300pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
3,523
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | - | 413pF @ 15V | 4V, 10V | ±20V | |||
,TO-226_straightlead.jpg)
|
VIEW |
746
In-stock
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Diodes Incorporated | MOSFET P-CH 60V 0.28A TO92-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) | 700mW (Ta) | P-Channel | 60V | 280mA (Ta) | 5 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | 100pF @ 18V | 10V | ±20V | |||
.jpg)
|
VIEW |
3,646
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
3,412
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 30V | 2.4A (Ta) | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | 280pF @ 15V | 4V, 10V | ±20V | |||
|
VIEW |
3,180
In-stock
|
Diodes Incorporated | MOSFET P-CH 40V 3.3A U-DFN2020 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 700mW (Ta) | P-Channel | 40V | 3.3A (Ta) | 33 mOhm @ 4.4A, 10V | 2.2V @ 250µA | 23.2nC @ 10V | 1382pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
890
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 1.3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 700mW (Ta) | P-Channel | 30V | 1.3A (Ta) | 180 mOhm @ 1.3A, 10V | 3V @ 250µA | 3.2nC @ 4.5V | 565pF @ 10V | 4.5V, 10V | ±20V | |||
