- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,803
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 0.98A SC89-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SC-89-6 | 236mW (Ta) | P-Channel | 30V | - | 173 mOhm @ 980mA, 10V | 3V @ 250µA | 9.45nC @ 10V | 265pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,401
In-stock
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ON Semiconductor | MOSFET P-CH 30V 2A SOT563 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563/SCH6 | 800mW (Ta) | P-Channel | 30V | 2A (Ta) | 150 mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
1,935
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 1.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | P-Channel | 30V | 1.5A (Ta) | 160 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.5nC @ 10V | 230pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
3,646
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
3,426
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | U-MOSII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 30V | 1.4A (Ta) | 251 mOhm @ 650mA, 10V | 2.6V @ 1mA | - | 137pF @ 15V | 4V, 10V | ±20V | |||
