- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,935
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 1.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 400mW (Ta) | P-Channel | 30V | 1.5A (Ta) | 160 mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.5nC @ 10V | 230pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
3,646
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | |||
