- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,222
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 4.6A 9-BGA | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-WFBGA | 9-BGA (1.5x1.5) | 1.7W (Ta) | P-Channel | - | 20V | 4.6A (Ta) | 46 mOhm @ 4.6A, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | 754pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
625
In-stock
|
Infineon Technologies | MOSFET P-CH 12V 5.5A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | - | 12V | 5.5A (Ta) | 42 mOhm @ 5.5A, 4.5V | 600mV @ 250µA | 33nC @ 5V | 1820pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
1,290
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(SOT23-6) | 1.7W (Ta) | P-Channel | - | 20V | 2.4A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | 210pF @ 15V | 2.7V, 4.5V | ±12V | |||
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|
VIEW |
1,731
In-stock
|
Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | P-Channel | - | 20V | 2.4A (Ta) | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 8.8nC @ 4.5V | 210pF @ 15V | 2.7V, 4.5V | ±12V | |||
