Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI7703EDN-T1-GE3
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Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8 PPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.3W (Ta) P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 48 mOhm @ 6.3A, 4.5V 1V @ 800µA 18nC @ 4.5V - 1.8V, 4.5V ±12V
IRF7534D1TR
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3,838
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Infineon Technologies MOSFET P-CH 20V 4.3A MICRO8 FETKY™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 1.25W (Ta) P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 55 mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15nC @ 5V 1066pF @ 10V 2.5V, 4.5V ±12V
IRF7422D2TRPBF
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RFQ
1,013
In-stock
Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC FETKY™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 90 mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V 2.7V, 4.5V ±12V