- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,907
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 1.6A 6-TSOP | LITTLE FOOT® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 830mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.6A (Ta) | 200 mOhm @ 1.8A, 4.5V | 500mV @ 250µA (Min) | 4nC @ 4.5V | - | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,529
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 6A PPAK CHIPFET | LITTLE FOOT® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Dual | PowerPAK® ChipFet Dual | 2.3W (Ta), 10.4W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 6A (Tc) | 58 mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 10V | 480pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,847
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.7A 8-SOIC | LITTLE FOOT® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.75W (Ta), 2.75W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Tc) | 210 mOhm @ 2A, 4.5V | 1.5V @ 250µA | 4.5nC @ 4.5V | 312pF @ 10V | 2.5V, 4.5V | ±12V | |||
