Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI7703EDN-T1-GE3
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926
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Vishay Siliconix MOSFET P-CH 20V 4.3A 1212-8 PPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.3W (Ta) P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 48 mOhm @ 6.3A, 4.5V 1V @ 800µA 18nC @ 4.5V - 1.8V, 4.5V ±12V
SI7621DN-T1-GE3
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1,313
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Vishay Siliconix MOSFET P-CH 20V 4A 1212-8 PPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.1W (Ta), 12.5W (Tc) P-Channel - 20V 4A (Tc) 90 mOhm @ 3.9A, 4.5V 2V @ 250µA 6.2nC @ 5V 300pF @ 10V 2.5V, 4.5V ±12V
SI7409ADN-T1-E3
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756
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Vishay Siliconix MOSFET P-CH 30V 7A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 1.5W (Ta) P-Channel - 30V 7A (Ta) 19 mOhm @ 11A, 4.5V 1.5V @ 250µA 40nC @ 4.5V - 2.5V, 4.5V ±12V
SI7601DN-T1-GE3
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3,062
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Vishay Siliconix MOSFET P-CH 20V 16A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.8W (Ta), 52W (Tc) P-Channel - 20V 16A (Tc) 19.2 mOhm @ 11A, 4.5V 1.6V @ 250µA 27nC @ 5V 1870pF @ 10V 2.5V, 4.5V ±12V