Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
MCH3382-TL-W
RFQ
VIEW
RFQ
3,468
In-stock
ON Semiconductor MOSFET P-CH 12V 2A MCPH3 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads SC-70FL/MCPH3 800mW (Ta) P-Channel 12V 2A (Ta) 198 mOhm @ 1A, 4.5V 900mV @ 1mA 2.3nC @ 4.5V 170pF @ 6V 1.8V, 4.5V ±9V
SI7485DP-T1-E3
RFQ
VIEW
RFQ
1,774
In-stock
Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.8W (Ta) P-Channel 20V 12.5A (Ta) 7.3 mOhm @ 20A, 4.5V 900mV @ 1mA 150nC @ 5V - 1.8V, 4.5V ±8V
SI7485DP-T1-GE3
RFQ
VIEW
RFQ
925
In-stock
Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.8W (Ta) P-Channel 20V 12.5A (Ta) 7.3 mOhm @ 20A, 4.5V 900mV @ 1mA 150nC @ 5V - 1.8V, 4.5V ±8V