Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMFPB8040XP,115
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2,994
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Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad DFN2020-6 485mW (Ta), 6.25W (Tc) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 102 mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6nC @ 4.5V 550pF @ 10V 1.8V, 4.5V ±12V
SI1417EDH-T1-E3
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RFQ
1,136
In-stock
Vishay Siliconix MOSFET P-CH 12V 2.7A SC70-6 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1W (Ta) P-Channel - 12V 2.7A (Ta) 85 mOhm @ 3.3A, 4.5V 450mV @ 250µA (Min) 8nC @ 4.5V - 1.8V, 4.5V ±12V
SI1417EDH-T1-GE3
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RFQ
2,665
In-stock
Vishay Siliconix MOSFET P-CH 12V 2.7A SC-70-6 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1W (Ta) P-Channel - 12V 2.7A (Ta) 85 mOhm @ 3.3A, 4.5V 450mV @ 250µA (Min) 8nC @ 4.5V - 1.8V, 4.5V ±12V
SI5855DC-T1-E3
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RFQ
3,924
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.7A 1206-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.1W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 110 mOhm @ 2.7A, 4.5V 1V @ 250µA 7.7nC @ 4.5V - 1.8V, 4.5V ±8V
SI5853DC-T1-E3
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RFQ
822
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.7A 1206-8 LITTLE FOOT® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1206-8 ChipFET™ 1.1W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 110 mOhm @ 2.7A, 4.5V 1V @ 250µA 7.7nC @ 4.5V - 1.8V, 4.5V ±8V
TPCF8B01(TE85L,F,M
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RFQ
2,422
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.7A VS-8 U-MOSIII Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 330mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 110 mOhm @ 1.4A, 4.5V 1.2V @ 200µA 6nC @ 5V 470pF @ 10V 1.8V, 4.5V ±8V
NTJS3151PT1G
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RFQ
733
In-stock
ON Semiconductor MOSFET P-CH 12V 2.7A SOT-363 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 625mW (Ta) P-Channel - 12V 2.7A (Ta) 60 mOhm @ 3.3A, 4.5V 1.2V @ 100µA 8.6nC @ 4.5V 850pF @ 12V 1.8V, 4.5V ±12V