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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,994
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 2.7A HUSON6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 | 485mW (Ta), 6.25W (Tc) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | 1.8V, 4.5V | ±12V | |||
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VIEW |
1,136
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 2.7A SC70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | P-Channel | - | 12V | 2.7A (Ta) | 85 mOhm @ 3.3A, 4.5V | 450mV @ 250µA (Min) | 8nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
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VIEW |
2,665
In-stock
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Vishay Siliconix | MOSFET P-CH 12V 2.7A SC-70-6 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) | 1W (Ta) | P-Channel | - | 12V | 2.7A (Ta) | 85 mOhm @ 3.3A, 4.5V | 450mV @ 250µA (Min) | 8nC @ 4.5V | - | 1.8V, 4.5V | ±12V | |||
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VIEW |
3,924
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
822
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | LITTLE FOOT® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.1W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 7.7nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,422
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | |||
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VIEW |
733
In-stock
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ON Semiconductor | MOSFET P-CH 12V 2.7A SOT-363 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 | 625mW (Ta) | P-Channel | - | 12V | 2.7A (Ta) | 60 mOhm @ 3.3A, 4.5V | 1.2V @ 100µA | 8.6nC @ 4.5V | 850pF @ 12V | 1.8V, 4.5V | ±12V |